Lead University: Lehigh University
PI: Prof. Nicholas Strandwitz

Vapor phase growth of thin films is essential to modern microelectronics and impacts fields from photovoltaics to transistors to lasers. Currently, there is a need for high performance low-dielectric constant materials for integrated circuits. Gelest, a world leader in silane-based chemistries produces several proprietary molecular precursors for vapor phase thin film growth that are highly promising for the growth of low dielectric constant materials. The Strandwitz group at Lehigh will examine the growth and properties of low dielectric constant layers derived from Gelest’s precursors, focusing on the emerging class of cyclic azasilanes. The deposition chemistries and processing techniques developed will be translated to industry for adoption in integrated circuit and photovoltaic industries.